Fursenko O. Optical and photoelectric characteristics of metal-semiconductor (GaAs, InP, Si) solid state structures with transition layer

The metal-semiconductor (GaAs, InP, Si) solid-state structures with transition layer. Research of optical characteristics of solid-state components of metal-semiconductor barrier structures with transition layer of different physical nature and their influence on optical and photoelectric characteristics of structure entirety. Methods - ellipsometry (usual and polaritonic), transmission/reflection spectroscopy, electrical and photoelectric measurements, auger electron spectroscopy, atomic force microscopy, theoretical analysis of transmission and reflection of light by solid-state structures. The non-destructive complex optical method of optical parameters and thickness determination for two-layers absorbing systems on transparent substrates, based on usual, polaritonic ellipsometry and transmission spectroscopy has been developed. The possibility of photopleochroism using at oblique incidence of light on metal-semiconductor structure with transition layer for devising high-sensitive photoanalyzers has been based. Surface polariton excitation was shown to be an additional mechanism of photosensitivity enhancement of structures with quasiperiodical interface microrelief that may be used in polaritonic optoelectronic devices.