Puzenko O. The investigation of generation processes and annealing of thermodefects in silicon.

The object of investigations was dislocation-free single-crystal Silicon during Chochralski Crystal Growth. The goal was to obtain the information about nature of oxygen thermodefects in Silicon and to determine the possibilities of increasing of thermal stabilities. Investigations of thermal defect parameters were carried by some experremental methods: Hall-effect, DLTS (Deep Level Transient Spectroscopy), EPR (Electronic Paramagnetic Resonance), IRS (InraRed Spectroscopy). The thermodonors which are created at the temperature 4500С and 5300С as well as variation of internal elastic lattice strain under heat treatment at 10500С were studied. The results show on possibility of influence on generation of thermaldonors due to the influence of micro-inhomogeneties of oxygen distribution. Found connection between changing of internal elastic strain and time of hightemperature treatment at 10500С can be used in planar technology of SiO2-gutters formation