Kovalenko O. Investigation of optical and electrical properties crystals, epitaxial layers and quantum well structures on the basis zincsulphite and zincselenide.

It has been investigation of optical and electrical properties of ZnSxSe1-x crystals with different admixtures, heteroepitaxial structures ZnSe/GaAs (100) and quantum well structures as like as single quantum well structures - ZnS-ZnSe-ZnS/GaAs (100) and superlattices - ZnS/ZnSe/GaAs (100). It has been analyse of charge transfer processes by PL in ZnS: Al, Cr, Fe crystals; study of changes in EPR and PL spectra on plastic deformation ZnS: Eu; ZnS: Al, Cr, Fe; ZnS: Al, Cr, Fe, Cu crystals; investigation influence of thermoprocessing on the type of conductivity ZnSxSe1-x crystals. In work develop a complex research of physical process, which we have had in the case of ZnSe layers grown on GaAs (100) by the VPE, photo-assisted VPE and x-ray-assisted VPE technology. It has been stude the possibility improvement of crystal structure and correct of optical properties epitaxial ZnSe layers on GaAs (100) substrate by the way of influence on semiconductor films the soft x-ray radiation and big hydrostatical pre ssure. In work receive a new experimental data concerning exciton PL and reflection spectra of ZnSe layers on GaAs (100) with different thickness and character of internal deformation strain. For the first time using the photo-assisted VPE technology on GaAs (100) substrate have been grown the quantum well structures on the basis of zincsulphite and zincselenide and tudies theirs optical properties.