Galushchak M. Defect formation mechanisms and modification of properties of AIVBVI semiconductor compounds

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0504U000689

Thesis Registration Form

0504U000689.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

16-12-2004

Specialized Academic Board

Д 55.051.02

Sumy State University

Essay

On the basis of complex theoretical and experimental researches the influence of technological terms of growing and external factors (vacuum and atmosphere of oxygen annealing, alloying, irradiation) on forming and interaction of dominant atomic defects in thin films of lead chalkogenides and tin tellurides, creation of physical models of defect formation processes for directed modification of structure and electric properties of materials that necessary for the opto- and microelectronics are shown.

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Files

AREF.doc

Dis.doc

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