Talanin I. The mechanism of formation of grown-in microdefects in dislocation-free silicon monocrystals and their property

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0505U000095

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

25-02-2005

Specialized Academic Board

Д 76.051.01

Essay

Object - properties and mechanism of microdefects formation, growth and transformation in dislocation-free Si; the purpose - exposure properties of grown-in microdefects in dislocation-free Si (CZ-Si and FZ-Si) and determination of the mechanism of formation, growth and transformation of microdefects; methods - selective etching, transmission electron microscopy, measurement of electrophysical parameters of monocrystals and electrical performances of device structures; the novelty - the heterogeneous mechanism of grown-in microdefects formation, growth and transformation is established. The grown-in microdefects uniform classification for the first time is created; branch - electronic industry

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