Neimash V. Processes of oxygen impurity state transformation in the silicon single crystals under high energy irradiation and heat treatments

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0507U000507

Thesis Registration Form

0507U000507.pdf

Applicant for

Neimash Volodymyr Borysovych

Specialization

01.04.07 - Фізика твердого тіла

Date of defense

27-09-2007

Specialized Academic Board

Д 26.159.01

Institute of physics of NAS of Ukraine

Essay

The reorganization processes of oxygen impurity state in silicon single crystals at their thermal and radiating excitation are investigated. The existence of oxygen impurity heterogeneities of spatial distribution in silicon crystals is shown in submicron scale. Oxygen atoms in this state obtain some additional collective properties under action of heat and radiation. Thermal-radiating condensation of oxygen atoms on radiation defects is revealed. The mechanisms of Sn and Pb impurities influence on the oxygen condition in silicon are analyzed. Several new acceptor and donor state of oxygen in silicon are revealed after irradiation at temperatures of complete annealing of all known electrical active radiation defects.

Thesis supervisor

Kraitchinskii Anatoliy Mykolayovych

Official opponents

Макара Володимир Арсенійович
Бабич Вілик Максимович
Хівріч Володимир Ілліч

Files

Автореф Неймаша.doc

Дисер Неймаша.doc

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