Bacherikov Y. Effect of low-energy impacts on the structural changes and on the energy spectrum of dispersed materials

Dissertation thesis of Doctorial degree in Physics and Mathematics sciences іn speciality 01.04.07 - Solid State Physics. V.E. Lashkarev Institute of semiconductors physics of National Academy of Sciences of Ukraine, Kyiv, 2010. The work deals with the development of the approach to increase the efficiency of the low energy effect on the solid. The mechanism of the effect on the luminescent characteristics and microstructure transformation processes caused by the low temperature doping and other low energy external effects in the dispersed two-component materials have been studied. Ga implantation processes in ZnS have been considered on the base of the thermodynamic conception. The influence of the external factors on the efficiency of the low temperature doping of the powder-like ZnS with Ga resulting in modification of the free energy components was found. It was shown that the primary introduction of the In and Ga impurities give rise to the overlapping of the copper dislocation diffusion channel. It was established that Mn diffusion process in the powder-like ZnS occurs at T = 3000K. The diffusion mechanisms and the emitting center transformation dynamics caused by Mn have been established. The effect of the heat application rates as well as rate of rise of the magnetic field induction on the luminescent characteristics of the doped ZnS have been studied. Two types of the luminescent center transformation processes caused by phase transitions and magneto plastic effects have been found.