Borovij M. Nearthreshold multionization of the electronic inner shells of silicon and 3d-, 5d- metals

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0511U000735

Thesis Registration Form

0511U000735.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

26-09-2011

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The thesis deals with the finding the regularities of multionization processes of the electronic inner shells of silicon and 3d-, 5d-metal atoms at nearthreshold photoabsorption and electron impact and at nearthreshold autoionization by Auger and Coster-Kronig (CK) transitions. The influence of radiating atom neighbours on the characteristics of inner shells multionization processes is considered. It is revealed the distinction of mechanisms nearthreshold multionization by electrons and photons. The cascade model of X-Ray L- and M-emission is offered.

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Files

Dis_Borovij.pdf

aref_borovij.pdf

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