Okhrimenko O. Modification of the physical properties of structures oxide/ silicon carbide.

The thesis studied the basic laws and physical mechanisms of restructuring of the defect-impurity system in the structures oxide/semiconductor, depending on the technology of obtaining, the composition of the oxide film, additional treatments and the introduction of buffer layers. . It is found that even a short microwave action lead to changes of the optical characteristics of the structures oxide film/silicon carbide. The model of the athermal microwave exposure was proposed for explaining the mechanism of action of microwave radiation on the structure of oxide film/semiconductor. It was established that the formation of structures of SiC/por-SiC/TiO2 by rapid thermal annealing (RTA) is a competition of two processes: 1) the stabilization of the stoichiometric composition occurring titanium oxide (rutile) and an increase in the grain size of the oxide film to 70-100 nm, 2) occurs in the interface of por-SiC/TiO2, the graphite phase which impairs the quality of the interface. It is found that the laser annealing can be used to control the transparency of the multilayer structures with thin silicon films. It was found that the electron beam processing (EBP), along with the formation of a more uniform relief SiC surface also leads to the appearance in the material additional absorption centers which associated with dislocations, the appearance of which is due to thermal stresses occurring in the surface layer of silicon carbide with EBP. A model explaining the effect of the form-factor of the substrate since on the size of the nanoparticles, which are formed in the pore.