Koplak O. Electron and nuclear spin dynamics in nano- and heterostructures of semiconductor

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0517U000799

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

27-11-2017

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

Doctoral thesis is joining three branches of experimental researches in the frame of unified conception of application of micro particles spins for development of logic devices: a) quantum computing based on nuclear spins of magnetic silicon isotope, b) inorganic semiconductor spintronics, c) organic spintronics. Quantum computing (a) is presented by investigations of oxidation and plastic deformation in isotope enriched silicon. Effect of hyperfine interaction on silicon oxidation was discovered (magnetic isotope effect). New principles of deformation isotopic engineering of near surface silicon layers were developed. Inorganic semiconductor structures of following types were studied: InGaAs/GaAs/GaAs:Mn heterostructures containing quantum well, and ferromagnetic MnSb clusters embedded in GaAs crystal lattice. Remote effect of ferromagnetic ordering in Mn layer on photoluminescence polarization of outlying InGaAs quantum well was found due to propagation of holes wave function in Mn layer. In GaMnSb thin films, effect of holes concentration in conductive GaSb matrix on saturation mag-netization of MnSb ferromagnetic clusters was found. In organic semiconductors DOEO4HgBr4TCE, natural heterostructures providing Schottky barriers formation and possessing antiferromagnetic ordering due to localization of holes inside them were found. Effects of replacement of 12C and H to 13С and deuterium isotopes, correspondently, on charge carriers (holes) localization critical temperature were founding a'-(BEDT-TTF)2IBr2 organic semiconductors enriched with magnetic isotopes. New branches of isotope engineering of materials for spintronics and quantum computing were developed. Contributions of structural defects as well as surface and interphase electronic processes to magnetic and electrical properties of logic devices were established.

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