Olikh O. Acoustically and radiation induced phenomena in surface barrier silicon and gallium arsenide structures

The thesis is devote to the study of the ultrasonic loading as well as irradiation (gamma-rays, neutrons) influence on current in the p-n structures (Si) and Schottky diode (Si, GaAs). It is revealed the acoustically induced reversible decrease in the carrier lifetime in the silicon solar cells, including irradiated. A model of acoustically active complex point recombination centers is proposed for the purpose of interpretation of revealed effects. It is shown that the main acoustically active radiation defects are divacancy and A-center. A comparative analysis of analytical, numerical and evolutionary methods for Schottky diode parameters determination has been carried out and the most optimal ones are defined in terms of accuracy and speed. The relationship between the type of change in the Schottky barrier height of Al-n-n+-Si structure with the increasing of gamma-rays dose and the degree of contact inhomogeneity is revealed. The reversible influence of ultrasound on the both barrier height and reverse current in the silicon-metal structures is revealed and attributed to the dislocation kinks movement and the defect clusters size changing. It is discovered that the effect of microwave irradiation on the defective structure of the near-surface layer of GaAs and SiC single crystals and as well as GaAs epitaxial structures is caused by increase in concentration of interstitial atoms. It has been found that ultrasonic treatment can causes both increase in the homogeneity of the parameters of GaAs Schottky diodes and the modification in concentration as well as energy spectrum of radiation induced interface traps in Si-SiO2.