Savkina R. Crystals and composite nanostructures properties engineering under ultrasound processing

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0521U101986

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

29-09-2021

Specialized Academic Board

Д 26.199.01

VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine

Essay

The dissertation is devoted to the investigation of regularities of the formation of properties of real crystals, multilayer, and nanocomposite structures under the action of high frequency and high intensity ultrasound, both in the conditions of direct acoustic influence and in the conditions of acoustic energy accumulation in the liquid medium. The study of the physical mechanisms of these phenomena was carried out on a model range of materials, both with a low threshold of defect formation - mercury-containing narrow-gap semiconductor HgxCd1-xTe, x = 0.2-0.3, and with stronger interatomic bonds (Si, GaAs). This is important for deepening the fundamental knowledge about acoustically stimulated processes giving these materials new properties as well as expanding their application area. Based on complex, systematic studies of the effect of ultrasound on heteroepitaxial structures based on narrow-gap solid solution HgxCd1-xTe, x = 0.2-0.3 with n- and p-type conductivity, grown by liquid

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