Maikut S. Physico-topological simulation of devices with HF electromagnetic field concentration

In devices of vacuum-plasma and powerful electronics the key are the processes of magnetic control of the shape and direction of the electronic flow: induction devices for evaporation of materials, gas discharge and vacuum switches. Typically, the magnetic field in these devices is created by RF inductors and the use of RF magnetic field concentrator allows: - increase the efficiency of control of the form and direction of the electronic flow; - match the impedances of the electric source and inductor and, as a consequence, reduce the power consumption for the generation of control magnetic fields. Development of three-dimensional physical and topological models of induction devices with RF electromagnetic field concentration for evaporation of materials, for research of magnetic control of shape and direction of electronic flow in gas-discharge and vacuum switches allows to modernize their designs and optimize technological and electrophysical parameters.