Maliuta S. Peculiarities of scanning probe microscopy nanotechnologies application in diagnostics and direct surface modification of semiconductor nanostructures and 2D materials.

Thesis is devoted to the development of a multipurpose approach to the diagnostic of materials and structures of micro- and nanoelectronics devices using scanning probe microscopy and its application in the study of local morphological and electrophysical features of concept elements based on carbon materials and tin germanides. A method of indexing the faces of single crystals of synthetic semiconductor diamonds and corresponding optimization of their cutting scheme to obtain plates with an optimal configuration of growth sectors was developed. The parameters of selective etching of semiconductor diamond single crystals were optimized to reveal the features of the dislocation structure at the nano range. The regularities of the change in the density of dislocations along the axis of growth and in the vicinity of intersectoral borders have been established. The effects of decorating dislocations with background impurities have been revealed. The techniques of Kelvin probe force microscopy and spreading resistance microscopy were adapted to detect local electrophysical features of intersectoral boundaries and individual dislocations and impurity clusters in single crystal semiconductor diamond plates. It was established that the intersectoral boundaries are coherent, without the accumulation of dislocation defects, and the nuclei of dislocations very weakly, in comparison with the boundaries of the sectors, show electrical activity during mapping by the contact current-sensitive method of scanning microscopy of the spreading resistance. In non-contact electrostatic mapping of the local surface potential by the Kelvin-probe force microscopy method, the etching dislocation pits are electroneutral and do not reveal a potential contrast. In non-contact electrostatic mapping of the local surface potential by the Kelvin-probe microscopy method, the etching dislocation pits are electroneutral and do not reveal a potential contrast. It was established that due to the absence of structural defects, the intersectoral boundaries provide sharp interface of the surface potential with a difference of the order of 1V, which can be used in the development of structural elements of electronic devices. The nanoindentation technique based on atomic force spectroscopy was adapted to measure the modulus of elasticity of thin films of tin germanides. Non-monotonic changes in the reduced modulus of elasticity of GeSn films were revealed when the tin content changed from 1 to 12%. This effect is explained by the peculiarities of the process of structural relaxation during changes in the thickness and component composition of GeSn films. Taking into account this nonlinearity of the change in the modulus of elasticity when changing the component composition is critically important in the tasks of deformation engineering of the GeSn band structure for the implementation of the indirect/direct-band semiconductor transition. Properties of self-induced Ge99Sn1 micro-stripes on the surface of epitaxial films Ge88Sn12 were investigated using scanning capacitive microscopy and Kelvin probe force microscopy. The effect of conductivity type inversion of p-GeSn micro-stripes when applying a bias voltage between the microscope probe and the planar ohmic contact on the surface of the Ge film was revealed. This effect can be used in the development of prototypes of diode structures. The self-induced formation of GeSn nanowires with a tin content of more than 40% was revealed. The mechanism of their formation is explained and their local electrophysical parameters are illustrated by current-sensitive probe microscopy methods. The obtained results can be used to improve the characteristics of microelectronics devices and in the development of their possible conceptual elements based on carbon materials and tin germanides.