The object of research: device structures of integrated signal converters for the creation of intelligent sensors, sensor microsystems and microlaboratories-on-a-chip, including on the basis of "silicon-on-insulator" structures. The subject of research is the electrical and frequency characteristics of ICS device structures, suitable for the development and manufacture of the element base of sensor microsystems-on-a-chip. The purpose of the research: The purpose of the dissertation work is to develop and research a constructive-technological and schematic-topological elemental base, in particular, based on CMOS structures and "silicon-on-insulator" structures for the creation of primary elements of ICS, necessary for the construction of sensor microsystems and microlaboratories-on-chip, modeling and research of their electrical, frequency and temperature characteristics, parametric optimization of integrated instrument structures. Research methods: Research was conducted using a system approach based on the theory of MOS - instrument structures, their physical models. Development and modeling of technological processes and modes of formation of instrument structures were carried out in CAD TCAD. Interactive design systems LT SPICE, Tanner Pro, MicroWind were used to develop integrated circuit solutions and element topologies of integrated converters. Theoretical and practical results: The topology and basic technological operations of the formation of CMOS-matrix cells for the construction of ICS elements with the possibility of "kink-effect" control and integration into the SOI MOS-transistor of separate control of the subchannel region of the transistor are proposed, which will allow combining in one combined transistor two - SOI MOS and bipolar connected in parallel to it. Topologies of the basic OA element for ICS on standard and SOI CMOS structures, as well as on the basis of the basic matrix cell, were designed. Their schematic topological modeling was carried out directly from the topologies. Such elements can be the basis for the construction of ICS in microsystems-on-a-chip. It is shown that the output signals for the ICS scheme with SOI structures compared to standard CMOS have a better, on average, 30% steepness of the fronts and a 20% higher amplitude amplification factor. The simulation shows that output stages on SOI-structures have a lower delay (4 ps and 7 ps, respectively) and lower power consumption (6.89 mW and 8.88 mW, respectively). Novelty: Based on the analysis of literature data and computer simulations, it has been shown and confirmed that SOI CMOS structures can be considered a promising alternative to standard CMOS structures on bulk silicon for creating ICS elements. Their area on the chip is on average 2-3 times smaller compared to standard CMOS structures on monosilicon, significantly 3 times higher speed, radiation resistance, 4 times less power consumption, wider temperature range up to 300oC. However, their main drawback of the SOI of n-channel MOS transistors is the "kink" effect. Special circuit topological solutions are proposed by connecting the sub-channel region to the ground bus using the example of a basic matrix cell, which is suitable for "matrix" switching in circuits, and eliminates the "kink effect" for n-channel SOI MON transistors. A comprehensive study of the low-temperature magnetic conductivity of polysilicon-on-insulator layers in fields up to 14T at the temperatures of liquid helium in a wide range of concentrations (from 7×1017 to 1.7×1020 cm-3) covering the metal-dielectric transition in silicon was carried out, which allowed to determine the suitability of such samples for the creation of ICS and magnetic field sensors. The results of the research of piezoelectric resistance in non-recrystallized and recrystallized layers of polysilicon-on-insulator were obtained, which indicate that for the development of ICS of mechanical quantities that have sufficient strain sensitivity to the measured parameter, it is necessary to use laser-recrystallized layers of polysilicon-on-insulator with concentration p-type conductivity 4.8x1018 cm-3 at 300oK. Circuit engineering solutions for ICS have been developed, which allow evaluating ultra-small capacitive and resistive elements, and can be used for external sensor elements, as well as built directly into a microsystem-on-a-crystal. Field of use: microelectronics, electronics, sensor elements.
