Zhuchenko Z. Magnetooptical and many-body phenomena in heterostructures based on InGaAs quantum wells possessing close to the critical widths

Object of investigation - pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with InGaAs quantum wells. Goal of thesis - overall investigation of InGaAs quantum channel of under critical layer thickness. Investigation methods - photoluminescence, magnetoluminescence, Raman scattering, optical detection of quantum oscillations of photoluminescence intensity in magnetic field. It is shown that the mechanism of radiative recombination changes from excitonic-like to band-to-band under decrease of quantum well width below the critical value. It is established that there exists the interval of quantum well width (12 - 20 nm) where the quantum well quality preserves predictable for the given heterostructures. New peculiarities of behavior of many-body phenomena are found in quantum wells with high density two-dimensional electron gas. The results obtained can be used for improvement of technology of perfect AlGaAs/InGaAs/GaAs heterostructures growth and their nondestructive testing.