Kravchenko V. Infrared photoluminescence of ZnSe and ZnSe(Te) crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U000362

Thesis Registration Form

0400U000362.pdf

Applicant for

Specialization

  • 01.04.05 - Оптика, лазерна фізика

24-01-2000

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The infrared (IR) photoluminescence (PL) of ZnSe and ZnSe(Te) crystals are shown to be due to multicharge intrinsic point defects. The models of the 1.3 and 1.6 eV IR PL centers are proposed. The model of radiative recombination involving amphoteric centers in semiconductors has been verified. Recommendations are suggested how to increase the quantum efficiency of the red luminescence.

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