Karas' M. Investigation of influence of radiation defects on electrical properties of neutron transmutation doped germanium

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U001570

Thesis Registration Form

0400U001570.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

21-04-2000

Specialized Academic Board

К 26.199.01

Essay

In the thesis experimental research of the formation and annealing of radiation-induced defects of NTD natural Ge and monoisotopic Ge, Ge crystals have been carried out. The model is developed, which show the role of donor of the group V in procceses of creating defects and transmutation doping. It is established, that the cause of Hall coefficient anomaly near p-n-conversion in NTD Ge is creating of n- and p-layers due to compensation initial layers by radiation-induced defects.

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