Mykhajlyk T. Ellipsometry of superlattices and disodered surface of both GaAs and Si single crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U001850

Thesis Registration Form

0400U001850.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

16-06-2000

Specialized Academic Board

К 26.199.01

Essay

GaAs and Si single crystals with disordered surface and GaAs/GaPxAs1-x superlattices. To research their optical and geometrical proper-ties. Methods: multi-angle-of-incidence and spectroscopic ellipsometry, atomic force mic-roscopy, profilometry, infrared spectroscopy, X-ray diffraction and reflectivity at grazing incidence. A wide range of the electromagnetic radiation is proposed to characterize the surface disorder. Using of the perturbation theory are based. The difference between microrelief parameters obtained from different method are explained. Four models of superlattices are analysed and an optimal model is proposed. The energetic band parameters are obtained from dielectric function model and their dependence on layer thickness and phosphor content in alloy is analysed.

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