Chaban Y. Physical properties of crystals zinc selenide doped by impurities I and V of groups

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002958

Thesis Registration Form

0400U002958.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-10-2000

Specialized Academic Board

Д 76.051.01

Essay

The dissertation is devoted to reception zinc selenide p-type conductivity, complex research of their basic physical properties and study of opportunities of practical use. The layers ZnSe of a hole conductivity are received by a method of a high-temperature diffusion from a vapour phase in closed volume. The requirements of manufacturing p-ZnSe with different conductance and spectrum of radiation are spotted which can be used for produce of the optoelectronics devices.

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