Kovalenko Y. Influence of size effects on the electrophysical properties of GaAs structures with deep traps

The thesis is devoted to the investigation of the influence of size effects caused by deep traps on the electrophysical properties of thin - film GaAs structures. Numerical methods of calculation of the low-frequency Schottky barrier capacitance of a three-layered structure (a thin n-GaAs film - a buffer layer - a semi-insulating substrate) and selectivity doped AlGaAs/GaAs heterostructure have been developed. The formation mechanism of anomalous rising portion of the capacitance - voltage characteristic of the above structures has been considered. A model of the carrier trapping from the film to vacant deep levels of the buffer layer and substrate has been proposed. Numerical method of calculation of the extrinsic photoconductivity of thin - film n-GaAs structures under backgating has been developed. A new mechanism of the extrinsic photoconductivity of thin - film n-GaAs structures under backgating has been found. A procedure and instrument for low-frequency capacitance-voltage express-evaluation of semiconductive materials have been developed.