Rozhyn O. The photoluminescent properties of porous Si based structures subjected to surface treatments

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0401U001691

Thesis Registration Form

0401U001691.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

18-05-2001

Specialized Academic Board

К.26.199.01

Essay

Properties of porous Si based structures and their modification under the action of the surface treatments have been investigated. The effect of high-energy photoluminescence activation for the B+ implanted samples was revealed after rapid thermal annealing. Enhancement of nanosecond PL of diamond- like films (DLF), which were deposited onto porous Si surface, is explained by creation of carbon nanocrystals on the silicon wires surface and, as a result, the transfer of the charge carrier from porous Si to DLF followed by radiative recombination in the nanocrystals. The deposition of thin SiC layers onto porous Si results in formation of porous Si- SiC structures being more stable to influence of the thermal annealing compared to the initial porous Si. The effect of C60 emission sensitization has been observed after introduction of the C60 molecules into porous Si.

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