Dali A. Long-wave luminescence of ZnTe thin films

In this dissertation were presented the results of research of ZnTe thin films luminescence, that is conditioned by the recombination in deep centers and can be registered in the wave length interval (0,6 - 1,0) mm. The intracentral mechanism of radiation recombination of self activative luminescence with lmax=0,76 mm was presented. The parameters of luminescence center were cal-culated and its energetic diagram in configuration coordinates was plotted. The criterions of obser-vation of anomaly temperature dependency of luminescence intensity were also obtained. It was shown that non-elementary of band with lmax=0,60 mm, that is observed in ZnTe:Al films is con-nected with the contribution of two types of emitting junctions in recombination. For both junc-tions the donor-acceptor mechanism of recombination and nature of luminescence centers was found.The investigation of role of Li in formation of long-wave band with lmax=0,75 mm allowed to de-termine the nature of luminescence center of that band, whi ch is the associative complex, that con-sists of intrinsic defect - VTe and dоped- LiZn.The stability of depended luminescence of ZnTe films was also researched. The termo-diffuse mechanism of luminescence degradation in films, doped by Li at the temperature baking 500 K. The luminescence characteristics of films, doped by aluminum and oxygen at this temperatures of baking are stable and don't dеpend on the storage time..