Lytovchenko O. The preliminary irradiation influence on the oxygen precipitation and radiation hardness of silicon for the nuclear radiation detectors.

Object of investigation: kinetics of precipitation of O2 in irradiated Si, influence of a preliminary irradiation on radiation hardness of Si, characteristics of detectors of nuclear radiation. Aim: investigation of influence of preliminary irradiation on a precipitation of O2 in Si and development of methods of increasing of radiation hardness Si for detectors of nuclear radiation. Methods: measuring of optical absorbtion in Si , Hall effect, selective etching, an electronic microscopy, measuring of spectrometer characteristics of detectors. Main results: Si in irradiated by neutrons acceleration of a precipitation of O2 is observed and at doses > 10 16 n/cm 2 process of a precipitation is determined by the radiation defects. Irradiation Si by neutrons with the following annealing gives in making sinks for initial radiation defects that raises radiation hardness of Si. Radiation stable detectors and p-і-n diodes for fast neutrons with sensitivity of the greater than known analogs were developed.