Lytvyn O. Morphological and Structural Changes in III-V and II-VI Semiconductors and Related Systems Caused by Post-growth Treatments

Objects of investigation: Semiconductor compounds GaAs and ZnS as well as film-substrate systems based on them. The main task: To investigate relations between surface morphology of polycrystalline thin films used in semiconductor device structures and their crystalline structure, as well as processes of structure ordering in interface caused by post-growth treatments. The main research methods: Atomic Force Microscopy and X-ray diffraction structural analysis. The main results of investigation: Ascertained were the correlation of morphological and structural characteristics of polycrystalline ZnS:Cu films with conditions of fabrication as well as post-growth treatments and the structure perfection and thermoresistance of metal-GaAs systems with TiB2 аntidiffusion layers in dependence on parameters of magnetron deposition process and their thermal stability. Developed and improved are abovementioned methods of investigations. There results were used in elaboration of technologies for manufacturing sol id semiconductor structures used in microelectronic and optical devices with the aim of optimization of their performances.