Korovyts'kyj A. Kinetic effect in silicon-germanium solid solutions

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U001184

Thesis Registration Form

0402U001184.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

12-04-2002

Specialized Academic Board

К 32.051.01

Essay

The thesis is dedicated to investigation of kinetic effects in silicon-germanium solid solutions (Si1-xGex). It has been determined that the increase of piezoresistance effect and mobility anisotropy parameter. Lateral component of electron mobility is a sensitive parameter in respect to the introduction of additional scattering mechanism. At NGe>=7*1019 сm?3 a tendency of decreasing the deformation potential constant is observed. Piezoresistance relaxation caused by the atomic reorientation of A?centres has been fixed in ?irradiated crystals n-Si<Ge>. It has been experimentally determined and theoretically grounded that the mobility which characterizes scattering on isovalent impurities manifests temperature dependency ~T-0.5. It is shown that atoms of germanium nonbasic components form small clusters with the number of atoms changing on the level doping. The effective values of geometric dimentions are within 20…200A.

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