Sarikov A. The investigation of the formation mechanisms and physical properties of the semiconductor structures with developed surface

The dissertation is devoted to the study of formation mechanisms of semiconductor structures with developed surface as well as to the investigation of their excitonic and gettering characteristics. The new model for the formation of pores in silicon in the course of electrochemical etching is elaborated which allows reproducing a number of experimentally observed effects. The time evolution of distribution function of the wire-like Si crystals is studied in dependence on the limiting stage of their lateral growth. It is demonstrated that experimental evolution agrees with the limiting thermodynamic build-in of the Si atoms processes. In the framework of the method for investigation of the excitonic properties, based on the analysing luminescence spectra measured at single temperature, the increase of the exciton binding energy approximately three times in GaAs covered with dielectric is demonstrated. The applicability of this approach for the study of excitonic characteristics in nanosized Si crystalsis shown. The simple method for the determination of zone and geometric parameters of these crystals is proposed. The mechanisms for the effective gettering in the structures multicrystalline Si - porous Si - Al layer are suggested as well as for the decrease of the gettering effectiveness for the annealing temperatures > 750-800OC.