Gorgut G. Phase equilibria and properties of intermediate phases in Ag2X - Ga2X3 - GeX2 (X - S, Se) systems

The dissertation contains the results of component interaction studies in Ag2S - Ga2S3 - GeS2 and Ag2Se - Ga2Se3 - GeSe2 systems. Phase diagrams, polythermal and isothermal (720 K) sections and liquidus surface projections were built. The formation of nine ternary compounds (six in S-containing and three in Se-containing systems) was determined. The formation of quaternary phases AgGaGeS4 and AgGaGe3Se8 was determined. Both compounds are of the congruent type of melting at 1135 K and 993 K, respectively. Technology of the AgGaGe3Se8 single crystal growth was developed. Electrophysical and optical properties of the AgGaGe3Se8 single crystals were investigated. Glass-forming regions were established in the selenium-containing system.