Tavrina T. Deviation from stoichiometry and cadmium sulfide effects on the structure and physical properties of CuInSe2

Object of investigation - copper indium diselenide semiconducting compound and solid solutions based on its, aim of investigation - the establishment of correlation between type and concentration both intrinsic and impurity defects, from one side, and structure and physical properties in such objects, from another side. Methods of investigation: microstructure investigation, X-ray diffraction, photoluminescence, measurements of microhardness, electrical conductivity and the Seebeck coefficient, the Hall effect investigation. Theoretical and practical results: The complex study of crystal structure, mechanical, galvanomagnetic, thermoelectric and luminescence properties of copper indium diselenide crystals under intentional introduction of non-stoichiometry defects of certain type was carried out. The correlation between composition, type and concentration of non-stoichiometry defects, structure and physical properties in ternary compound was established. The cadmium sulfide solubility limits in ternary compound were determined. The properties in the region of solid solutions based on copper indium diselenide were investigated. Field of application: physics and material research science of ternary and multinary semiconducting compounds, physics of non-stoichiometry, physics of defects.