Severyn V. Mechanism of light sensitivity of chalcogenide glassy semiconductor - metal system

The mechanism is offered, which explains complex of properties of light sensitive chalcogenide glassy semiconductor - metal system. It is shown that its properties are caused by potential barrier on the semiconductor - metal border, which one has galvanic and electronic components. Illumination of the system reduces its electronic component.It considerably augments diffusive flow of metal ions from metal into semiconductor. The change of electronic component is determined by photoelectric processes in the semiconductor. It gives source for ions diffusion into semiconductor which dependent on light. The solution of diffusion equation with this source results in expressions, which one explains complex of properties of the light sensitive system. It is shown, that induction period of infiltration kinetics of metal into semiconductor is conditioned by dependence of metal diffusion coefficient in semiconductor from its concentration. It is shown, that dependence of the system light sensitivity from metal thickness, from side of illumination and view of last period of kinetics are conditioned by finiteness of the system layer thickness. Application of the built mechanism to analysis of recording process of holographic diffraction grating is conducted.