Komarov N. The growth of doped InSb single crystals and the convection modeling in the melt under ultrasound influence

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U002822

Thesis Registration Form

0402U002822.pdf

Applicant for

Specialization

  • 05.02.01 - Матеріалознавство

03-07-2002

Specialized Academic Board

Д 64.169.01

Institute for single crystals NASU

Essay

Object of investigation - the dopant striations, which appear in growing semiconductors single crystals, aim of investigation - the develop of the striations decrease method in growing InSb single crystals Te doping by Czochralski method. Methods of investigation: the modified Czochralski method, the method of chemical etching, the optical and electronic microscope, "light cut" method. Theoretical and practical results: The method growing semiconductor in ultrasonic field was developed. The introduction of ultrasonics at a frequency from 0.6 to 5 MHz decreases the striations in the facet. Degree of inculcation: The proposal method of crystal growth used for growing GaAs and Bi-Sb single crystals. Field of application: technology of semiconductors materials.

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Files

Dis4.doc

Dis5.1.doc

avref.doc

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