Lopushansky V. Radiation-induced changes of optical characteristics in nanocrystalline and bulk CdS1-xSex semiconductors

Object of investigation: size-quantum effects in optical spectra of the glass-embedded CdS1-xSex nanocrystals. Aim of studies: analysis of the main aspects of high-energy electron irradiation effect on the optical properties of CdS1-xSex semiconductor nanocrystals, embedded in borosilicate glass matrix, and their comparison with formation and transformation of radiation defects in bulk CdS1-xSex semiconductors and silicate glasses. Method of investigation: optical absorption spectroscopy, Raman scattering spectroscopy and luminescence spectroscopy. Scientific novelty of results: smearing of the size-quantum maxima in optical absorption spectra and blue shift of the absorption edge of the glass-embedded CdS1-xSex nanocrystals under electron and X-ray irradiation are shown. The maximal blueshift value depends on the type, energy and dose of the irradiating particles. The main mechanism, responsible for the observed irradiation-induced changes in the optical spectra of CdS1-xSex nanocrystals, embedded inborosilicate glass, is concluded to be the radiation-induced ionization of the nanocrystals due to the charge-carrier transport between them and the matrix. Implementation: planned. Sphere of application: optical devices, nanotechnology.