Voronov D. Phase transformations in Sc/Si and Sc/W/Si/W multilayer thing film systems.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U003047

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

04-10-2002

Specialized Academic Board

Д64.051.03

Essay

Object - Sc/Si and Sc/W/Si/W periodic multilayers; aim - to establish an essence and regularities of phase transformations and silicide formation process kinetics in multilayers based on scandium and silicon; methods - X-ray phase analysis, low-angle X-ray diffraction, transmission and scanning electron microscopy and X-ray microanalysis; results, novelty - for the first time the phase transformation processes taking place in Sc/Si and Sc/W/Si/W multilayers under heating are described. Formation of metastable phases (namely amorphous ScSi silicide and metastable crystalline Sc3Si5 silicide) is revealed to precede the formation of equilibrium crystalline silicides. The solid state amorphization reaction is found is find out to obey by diffusion kinetics. Silicon is the dominant diffusion species in Sc/Si system. It is find out the W-based diffusion barriers don't change the consecution of phase formation in Sc/W/Si/W coatings. However they noticeably decrease the velocity of the solid state amorpfization as well as sufficiently affect on amorpfization kinetics changing parabolic low of amorphous silicide on linear one; field of implementation - thing films physics, X-ray optics, plasma diagnostics, astrophysics

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