Moroz I. Interaction of powerful electromagnetic waves with integrated p-i-n-structures

The thesis is devoted to questions of improvement the characteristics of the integrated p-i-n-structures, which are intended for switching of the high power microwave field. The integrated p-i-n-structure is consider as the distributed system in the short wavelength part of the microwave range. The non-linear ambipolar equation of the carrier diffusion-drift process description is obtained. Non-linear component of the ambipolar equation characterizes the current detection in the p-i-n-diode non-uniform active region. The non-linear wave equation is solved and on the base of this solution the non-linear depth effect in the active region of diode is investigated. The relation for calculation of the electric field critical value (critical value determine the range of absence the non-linear effects) are proposed. The character of the critical value field dependence from such parameters, as the field frequency, і-region width, electron and hole impulse scattering average time, bias current average time is established.