Kramar N. Optical properties of the Layer Semiconductors PbI2

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001169

Thesis Registration Form

0403U001169.pdf

Applicant for

Kramar Nataliya Karlivna

Specialization

01.04.05 - Оптика, лазерна фізика

Date of defense

28-03-2003

Specialized Academic Board

Д 76.051.01

Essay

The structure of the electrons energy bands in the 2H-polytype PbI2 is calculated using the pseudopotential method. Effects of the screening, exchange and correlation are taken into account. The spectral relativities of optical parameters and effective masses of the electrons and holes were computed on the ground of energy dispersion law. The effect of interaction of exciton with optical, and both the low-energy optical and acoustic bending-wave type phonons on the form of exciton absorption band and its maxima location has been analyzed.

Thesis supervisor

Nitsovich Bohdan Mykhailovych

Official opponents

Ковалюк Захар Дмитрович
Лукіянець Богдан Антонович

Files

Kramar_Dysertaciya--Kramar_Dysertaciya.doc

aref.doc

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