Ryabchenko Y. Influence of Metastable and Resonant States on Transport Phenomena in А3В5 and А2В6 Solid Solutions

Effects of deep centers with large lattice relaxation in AlxGa1-xAs solid solutions and resonant levels formed by impurities in gapless Hg1-xFеxSe, Hg1-xCoxSe semiconductors and transport phenomena have been studied. Low temperature galvanomagnetic measurements in combination with variety external treatments on the samples under study have been used as a main experimental technique. Manifestation of effective-mass states of secondary minima in the persistent photoconductivity related to the DX center in AlxGa1-xAs is observed It was found that residual photoconductivity can be suppressed under ultrasonics influence and this phenomenon gives the opportunity to reveal the developing of DX0 intermediate state and can be confirmed by LLC model of DX centers. Our investigations reveal the composition dependencies of the electron energy spectrum in the Hg1-xFеxSe solid solution assuming the invariability of the position of the Fe d resonant level in the absolute energy scale; give quantitative descriptions of the experimentally observed composition dependencies of concentration and mobility of conduction electrons. The position of the extremum of Г8 band was shown. The result obtained on the ЕГ8(х) strong dependence enables us to state that the "common anion rule" is not valid for the samples under study. It was shown that 3d levels of Co in HgSe:Co do not reveal itself in correlation effects as they lay essentially lower Fermi level. Estimation of 3d position of Co shows that it is revealed not higher than 20 meV above the conductivity zone bottom. These results allow us to assume the same situation to be expected for Ni dopant ions.