Krasovsky I. Complex compounds layer on the surface of Cu, GaAs and ZnSe which formation was induced by hard UV-radiation (100-300 nm) in chlorine ambient

Object of investigation - layers of complex compounds which are formed on the surface of GaAs, ZnSe and Cu in chlorine ambient under exposure of hard ultra-violet radiation. Aim of investigation - to study phase-formation processes on the surface of GaAs, ZnSe and Cu in chlorine ambient, stimulated by influence of ultra-violet radiation with wavelength from 300 nm up to 100 nm. Methods of investigation: Auger electronic spectroscopy, X-ray photoelectronic spectroscopy, electron-probe the microanalysis, the optical microscopy, scanning electronic microscopy, microscopy of atomic forces, profilometry. Theoretical and practical results, novelty: dominating mechanisms of processes in diffusion zone, which is formed by photostimulated interaction of GaAs, ZnSe and Cu with chlorine are revealed. The kinetics of growth of a layer of reaction products is established. It is shown, that a metal is the prevailing diffusant in a layer of reaction products. The presence of accelerated diffusion areas in spots ofgrain borders egress, and the mechanism of their formation is explained. The ultrahigh (exceeding a unity) quantum efficiency of investigated photostimulated processes is established and explained. Field of application: physics of photostimulated heterogeneous processes in diffusion zone, a photolithography, micro- and nanoelectronics.