Drapak S. Particularities of physical properties of the heterocontacts based on gallium and indium monoselenides

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U004373

Thesis Registration Form

0404U004373.pdf

Applicant for

Drapak Stepan Ivanovych

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

28-10-2004

Specialized Academic Board

Д 76.051.01

Essay

A possibility of the use of tunnel-thin dielectric and frontal layers of intrinsic oxide of GaSe and InSe in heterostructures based on these semiconductors. The set of materials suitable for applications in photoelectronics is widened: In2Se3 (single crystal, film), propolis (a biological substanse of nature origination). The principal regulaities of long-term degradation of the barrier perameters in the structures based on layered GaSe and InSe are investigated.

Thesis supervisor

Kovalyuk Zakhar Dmytrovych

Official opponents

Берча Дарія Михайлівна
Паранчич Степан Юрійович

Files

Drapak.doc

aref.doc

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