Litvinchuk I. Strucrural changes in porous silicon after phosphorus ion implantation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U004528

Thesis Registration Form

0404U004528.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

29-10-2004

Specialized Academic Board

Д 76.051.01

Essay

The comprehensive X-ray investigations have been performed. The thickness distributions of the strains and disturbances in surface layers of the porous silicon after ion implantation by phosphorus have been reproduced. The influence of combined action of the ion implantation and chemical etching during the natural aging on the structural properties and photoluminescence characteristics of silicon have been considered. The mechanisms and regularities of thickness oscillations distributions have been investigate.

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