Kogut M. The dynamical integrated diffractometry of the disturbed surface layers of the single crystals with defects.

The experimental verification have been carried out and the affirmation have been obtained at the Bragg diffraction of the unique sensitivity of the total integrated reflective power (TIRP) of the crystal to defects. The dynamical nature of the TIRP increase eminently due to the anomalous growth of the TIRP diffuse component with the distortions strengthening have been established. This growth predominates essentially over the reduction of the coherent TIRP component, which is the cause of the high informative power of the diagnostics. At the Laue diffraction the dynamical nature of scattering have been experimentally established, which becomes apparent as the variation of sign of the defects influence on the TIRP by the transition from "thin crystal" approximation to the "thick crystal" approximation, which determines it's unique sensitivity to the defects. The models of the dynamical diffraction in the perfect crystals with the disturbed surface layer (DSL) and in the crystals, which content both the distributed at random defects (DRD) and DSL have been developed, experimentally tested and used for the diagnostics. On the basis of these models the new principles are developed for the separation of the contributions of the DSL and DRD to the TIRP, which are based on the control over the correlation between extinction lengths and absorption lengths and depths. The proposed method is the unique one, since it is provided for the quantitative diagnostics of the nanoscale characteristics of both the disturbed layer at the single crystal surface and the distributed at random in the volume defects.