Gamarnyk A. Point defects and characteristics of doped films and lead selenide crystals.

Object: films and bulk standards of plumbum selenide, alloyed by a bismuth and thallium on condition of the different deviation from stoichiometry in the base compound: PbSe:Bi, PbSe <Se>:Bi, PbSe <Pb>:Bi, PbSe <Pb>:Tl. Purpose: establishment of dominant models of point defects in films and crystals of plumbum selenide, alloyed by a bismuth and thallium at different conditions their growing and optimization of structural and electric parameters of semiconductor material for the necessities of opto- and microelectronics. Methods: electron probe X-ray analysis, electronic Auger spectrometry and radiography; optical metallography; X-ray topographic and combination-crystal diffractometry. Results: regularities of interference of Bi and Tl alloy admixtures and excess of Pb and Se own component on electric parameters of grew PbSe<Se>:Bi, PbSe<Pb>:Bi, and PbSe<Pb>:Tl films respectively are established first; the practically important parameters of defects formation processes are definite: equilibrium constants of and formation enthalpy.