Baran M. Influence of electron - deformational interaction on electron states and redistribution of electron density in the wide-zoned semiconductors with dislocations

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U003398

Thesis Registration Form

0405U003398.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

01-07-2005

Specialized Academic Board

Д 76.051.01

Essay

Thesis is devoted to theoretic research of electron-deformational interaction on the electron states and their filling in the wide-zoned semiconductors and heterosystems with dislocations. There was calculated the potential of edged dislocation and redistribution of electron density in semiconductors with dislocations according to the degree of resistance zone feeling. The influence of electron and deformational mechanism of screening on stretching properties of dislocational barrier was researched.

Read more

Files

автореферат.doc

дисВАКУ.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures