Andreev Y. Group methods for the growth of sapphire.

Object of investigation. Profiled sapphire growth process by Stepanov method. Goal of investigation. The goal of investigation is to determine legitimacies of structure formation and profiled sapphire properties in case of growth by the group methods. Methods of investigation and apparatures. Optical methods, spectrometric method and X-ray methods. Modern equipment, nonstandard and industrial equipment for crystal growth. Theoretical and practical results, novelty. Established is a relation between the quantity and distribution of pores in the crystals and the design of the shaper capillary system. For the first time, a coaxial method for growing a group of profiles is proposed, calculated are the thermal conditions in the system of coaxial sapphire tubes and found is the possibility to improve the quality of inner profiles depending on the quantity of outer ones. A number of methods are proposed for the growth of shaped crystals for the obtaining of articles with bottom of high optical quality. Reduction to practice. The new technologies of the obtaining of shaped sapphire are reduced to pilot industrial production at STC «Institute for single crystals». Application field. Modern branches of optics and optpelectronics.