Kovtun N. Structure, optical and electrical properties of zinc oxide doped films, obtained by means of magnetron sputtering technique.

The object of study: physical mechanisms of influence of physicotechnological conditions of magnetron sputtering on optical and electrical properties of doped films of zinc oxide/ The aim: development of basic physic of optimization of physicotechnological conditions of various types of magnetron sputtering in order to obtain doped films of zinc oxide with high qualitative index. The methods of the investigations: x-ray diffractometer examination of phasic composition and such parameters of crystal structure as: extent of coherent scattering region, microstrain level and texture scattering degree; optical spectroscopy for determination of average transmittance of layers over the range of wale-lengths (400-800) nm; four-probe method for identification of surface electrical resistivity of layers, Hall's emf method for identification of concentration and mobility of majority charge carriers. Results, novelty: It is shown, that obtaining of optimal optoelectrical properties for ZnO:In and ZnО:Al filmsby means of reactive magnetron sputtering on direct current takes place owing to the different physical mechanisms, that connected with different atomic radius of aluminum and indium. It has been established, that noncoventional change of physical dependencies of influence of ZnО:Al film thickness on majority charge carrier concentration is observed at non-reactive rf magnetron sputtering when increasing service pressure. Physical mechanisms of influence on optoelectrical properties of ZnО:Al films of doped phase concentration consisting of the target at non-reactive magnetron sputtering and magnetron power in case of rf-sputtering are improved and justified. Field of implementation: solid sate physics