Drogobyts'kyj Y. Transient thermal processes in semiconductors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U004855

Thesis Registration Form

0405U004855.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-11-2005

Specialized Academic Board

К32.051.01

Essay

Object: massive and thin film homogeneous, isotropic semiconductors and dielectrics. Aim: to build the theory of transient thermal processes excited by absorption of the laser pulse of rectangle shape on the surface and in the volume of the sample. Practical importance: theory of the thermal transient processes excited by the absorption of the energy of the laser pulse in the bounded, homogeneous, isotropic semiconductors on the surface and in the volume is built. Methods: analytical solution of the equations and equation systems of the energy balance for interacting electrons and phonons.

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Files

aref.pdf

diss.pdf

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