Gevyk V. X-ray Diffraction in Crystals and Multilayer Nanoscale Systems which Contains Dislocation Loops

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U004882

Thesis Registration Form

0405U004882.pdf

Applicant for

Gevyk Vasyl Bogdanovich

Specialization

01.04.07 - Фізика твердого тіла

Date of defense

28-10-2005

Specialized Academic Board

Д 76.051.01

Essay

The dynamical X-ray scattering processes in case of anomalous transmission on individual structural defects in silicon (dislocations, dislocation loops and barriers) were investigated using the numerical methods of solution Takagi equations. The structural parameters of nanoscale multilayer system with InxGa1-xAs1-yNy quantum wells were found using the X-ray double diffractometry.

Thesis supervisor

Fodchuk Igor Michaylovich

Official opponents

Прокопенко Ігор Васильович
Венгренович Роман Дмитрович

Files

Diser.doc

aref.doc

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