Penyukh B. The Influence of Surface Asperities on Charge Transport in Metallic Thin Films.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U000228

Applicant for

Specialization

  • 01.04.18 - Фізика і хімія поверхні

23-12-2005

Specialized Academic Board

Д 20.051.06

Kolomyia Educational-Scientific Institute The Vasyl Stefanyk Precarpathian National University

Essay

Object: conductivity, temperature coefficient of resistance (TCR), thermoelectromotive force, structure and morphology of films surface and flowing threshold change of films at presence of surfactant on substrate. Purpose: to set regularities of electric properties changes of Fe, Mn, Pb, Ho and Dy thin films under the influence of superficial and intergranular dispersion of current currier and presence of surfactant sublayer (Al or Ge) on the surface of dielectric substrate in the process of their thickness change. Methods: method of thermal evaporation of materials in the conditions of ultrahigh vacuum at remaining gases pressure that did not exceed 10-7 Pa; compensative method, methods of transmission electron microscopy and electronography. Results: the dimension dependence of specific resistance and temperature coefficient of resistance (TCR) of holmium and dysprosium films are got first, the parameters of charge transfer in films are calculated and estimation of average amplitude of acroscopic heterogeneities h of film thickness is done; the calculated size h well conforms to the data got by us by scanning tunnel microscopy (STM). Using: can be used in modern science of materials, micro-, nanoelectronics and other branches of science and technique for making of thin-film standards with the beforehand set physical properties.

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