Phomin A. Formation of Stable Sensor Characteristics of CdZnTe and ZnSe Crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U004893

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

20-11-2006

Specialized Academic Board

Д 64.245.01

Institute of Electrophysics & Radiation Technologies NAS of Ukraine

Essay

The object is commercial CdZnTe and ZnSe crystals growed from melt by HPVB and industrial sensors samples at their basis; the aims is experimental determining influence multiscale structural inhomogenieties, created by two-dimensional structural defects, on response stability of CdZnTe and ZnSe crystals to influence external factors (photons energy, temperature, frequency end intensity of external electric field) and to development way for purposeful forming their stable electrophysical characteristics; the methods are optical (optical and polarized, shadow, optical and IR-microscopy), dielectric, acoustic, chemical etching, profilometry, photoconductivity; the new approach lies in interconnection local instabilities spectral, dynamic, acoustic characteristics of CdZnTe and ZnSe crystals that is caused by unstable source and drains of internal elastic and electric fields formed by multiscale aggregates of two-dimensional structural defects; the main include way of acoustic laser treatment of crystals and way for revealing functionally similar structural inhomogeneities in piezoelectric crystal materials; all this thesis has been developed by "Research technical institute for instrument-making"; the field is sensors industry, treatment of crystal materials

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