Zaplitniy R. X-ray diffractometry of epitaxial structures CdхHg1-хTe and Si single crystal after ion implantation.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U004998

Thesis Registration Form

0406U004998.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

01-12-2006

Specialized Academic Board

Д 76.051.01

Essay

In this work the complex Х - ray researches of mechanisms of structural changes in the surface layers of the ion-implanted by As crystals CdTe, epitaxial structures CdxHg1-xTe with a complicated defects structure (dislocation loops, low angle borders, non-structural defects) after single and double implantation by the ions of As are carried out. Research of influencing of the combined action of ion implantation by P is conducted also and chemical etching on structural properties of silicon single crystal.

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Files

DisertZaplit.doc

aref.doc

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