Red'ko R. Modification of defect structure of II VI and III V semiconductor compounds by high-frequency electromagnetic radiation

The thesis deals with investigation of the features of modification of impurity-defect states in II VI and III V compounds under action of high-frequency electromagnetic radiation. A promising line in solid state physics is developed which is related to application of microwave radiation as purposeful technique for modification of defect structure of semiconductors. The results of the thesis are of importance also for development of scientific basis of a comprehensive and consistent notion of interaction of a superhigh-frequency wave with semiconductor materials. For the first time the effect of microwave electromagnetic radiation of various radiating powers and frequencies on the spectra of defect states in semiconductor crystals CdS, GaAs, GaP and InP, as well as SiO2/GaAs and por-InP structures, was studied experimentally. Possible mechanisms of defect structure transformation under microwave irradiation were estimated. The changes in spectra of radiative recombination of the structures studied areattributable to transformations which are qualitatively similar to those occurring on magnetic treatment. A possibility of application of microwave irradiation for technological purposes is shown.